IRF7380TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

80V

Threshold Voltage :

4V

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

17 ns

Factory Lead Time :

12 Weeks

Time@Peak Reflow Temperature-Max (s) :

30

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Length :

4.9784mm

Rise Time :

10ns

Base Part Number :

IRF7380PBF

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Height :

1.4986mm

Published :

2008

Mounting Type :

Surface Mount

FET Type :

2 N-Channel (Dual)

Power Dissipation :

2W

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Turn-Off Delay Time :

41 ns

Turn On Delay Time :

9 ns

Resistance :

73mOhm

JESD-609 Code :

e3

Width :

3.9878mm

Operating Temperature :

-55°C~150°C TJ

Nominal Vgs :

4 V

Voltage - Rated DC :

80V

Continuous Drain Current (ID) :

3.6A

Gate to Source Voltage (Vgs) :

20V

FET Feature :

Logic Level Gate

Series :

HEXFET®

Terminal Form :

Gull wing

Radiation Hardening :

No

Number of Terminations :

8

Element Configuration :

Dual

Current Rating :

3.6A

REACH SVHC :

No SVHC

Avalanche Energy Rating (Eas) :

75 mJ

Lead Free :

Lead Free

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

2

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

73m Ω @ 2.2A, 10V

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

2W

Number of Pins :

8

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V