IRF7380QTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Logic Level Gate

Length :

4.9784mm

Turn-Off Delay Time :

41 ns

Input Capacitance :

660pF

Min Operating Temperature :

-55°C

Current - Continuous Drain (Id) @ 25°C :

3.6A

Supplier Device Package :

8-SO

Packaging :

Cut Tape (CT)

Continuous Drain Current (ID) :

3.6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

73mOhm @ 2.2A, 10V

Turn On Delay Time :

9 ns

Mounting Type :

Surface Mount

Power - Max :

2W

Vgs(th) (Max) @ Id :

4V @ 250µA

Max Operating Temperature :

150°C

Number of Elements :

2

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mount :

Surface Mount

Drain to Source Resistance :

73mOhm

Rds On Max :

73 mΩ

Height :

1.4986mm

Base Part Number :

IRF7380QPBF

Series :

HEXFET®

Published :

2014

Max Power Dissipation :

2W

Fall Time (Typ) :

17 ns

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 25V

Width :

3.9878mm

Drain to Source Voltage (Vdss) :

80V

FET Type :

2 N-Channel (Dual)

RoHS Status :

RoHS Compliant

Power Dissipation :

2W

Rise Time :

10ns

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Number of Pins :

8