IRF7351TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

20V

Length :

4.9784mm

Input Capacitance (Ciss) (Max) @ Vds :

1330pF @ 30V

Number of Terminations :

8

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

17.8m Ω @ 8A, 10V

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Published :

2009

Drain to Source Voltage (Vdss) :

60V

Mount :

Surface Mount

Lead Free :

Lead Free

Number of Elements :

2

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Turn On Delay Time :

5.1 ns

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Power Dissipation :

2W

Base Part Number :

IRF7351PBF

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Dual

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

2W

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

8A

Width :

3.9878mm

Height :

1.4986mm

Turn-Off Delay Time :

17 ns

Fall Time (Typ) :

6.7 ns

Drain Current-Max (Abs) (ID) :

8A

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

FET Type :

2 N-Channel (Dual)

Rise Time :

5.9ns

Number of Pins :

8

Vgs(th) (Max) @ Id :

4V @ 50μA

Pulsed Drain Current-Max (IDM) :

64A

Drain to Source Breakdown Voltage :

60V