IRF7351PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn-Off Delay Time :

17 ns

Drain to Source Resistance :

17.8mOhm

Recovery Time :

30 ns

Published :

2006

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

8-SO

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Min Operating Temperature :

-55°C

FET Feature :

Logic Level Gate

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.4986mm

Max Power Dissipation :

2W

Series :

HEXFET®

Number of Pins :

8

REACH SVHC :

No SVHC

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

17.8mOhm @ 8A, 10V

Threshold Voltage :

4V

Vgs(th) (Max) @ Id :

4V @ 50μA

Packaging :

Tube

Element Configuration :

Dual

Factory Lead Time :

15 Weeks

Power Dissipation :

2W

Rise Time :

5.9ns

Base Part Number :

IRF7351PBF

Rds On Max :

17.8 mΩ

Mounting Type :

Surface Mount

Max Operating Temperature :

150°C

Fall Time (Typ) :

6.7 ns

Input Capacitance (Ciss) (Max) @ Vds :

1330pF @ 30V

Width :

3.9878mm

FET Type :

2 N-Channel (Dual)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Continuous Drain Current (ID) :

8A

Current - Continuous Drain (Id) @ 25°C :

8A

Input Capacitance :

1.33nF

Lead Free :

Lead Free

Turn On Delay Time :

5.1 ns

Drain to Source Breakdown Voltage :

60V

Nominal Vgs :

4 V

Drain to Source Voltage (Vdss) :

60V

Power - Max :

2W

Length :

4.9784mm