IRF7341GTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

50m Ω @ 5.1A, 10V

Mounting Type :

Surface Mount

Additional Feature :

ULTRA LOW RESISTANCE

FET Type :

2 N-Channel (Dual)

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Input Capacitance (Ciss) (Max) @ Vds :

780pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

MS-012AA

Power - Max :

2.4W

Number of Elements :

2

Continuous Drain Current (ID) :

5.1A

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.05Ohm

DS Breakdown Voltage-Min :

55V

Pulsed Drain Current-Max (IDM) :

42A

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Series :

HEXFET®

Factory Lead Time :

12 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Transistor Application :

SWITCHING

FET Feature :

Standard

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Terminations :

8

JESD-30 Code :

R-PDSO-G8

Published :

2005

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

55V

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

2.4W

Avalanche Energy Rating (Eas) :

140 mJ