IRF7309QTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Length :

4.9784mm

Rds On Max :

50 mΩ

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 15V

Max Power Dissipation :

1.4W

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

50mOhm @ 2.4A, 10V

Mounting Type :

Surface Mount

Supplier Device Package :

8-SO

Base Part Number :

IRF7309QPBF

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Height :

1.4986mm

Number of Pins :

8

Gate to Source Voltage (Vgs) :

20V

Min Operating Temperature :

-55°C

Radiation Hardening :

No

Width :

3.9878mm

Current - Continuous Drain (Id) @ 25°C :

4A 3A

FET Type :

N and P-Channel

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

30V

Published :

2005

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Standard

Power Dissipation :

1.4W

Power - Max :

1.4W

Packaging :

Cut Tape (CT)

Input Capacitance :

520pF

Mount :

Surface Mount

Continuous Drain Current (ID) :

3A

Vgs(th) (Max) @ Id :

1V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 4.5V