IRF7307QTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Min Operating Temperature :

-55°C

Number of Pins :

8

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Length :

4.9784mm

Series :

HEXFET®

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Width :

3.9878mm

Max Power Dissipation :

2W

Number of Elements :

2

Packaging :

Cut Tape (CT)

ECCN Code :

EAR99

FET Feature :

Logic Level Gate

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

12V

Pulsed Drain Current-Max (IDM) :

21A

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 15V

Terminal Position :

Dual

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Published :

2010

JEDEC-95 Code :

MS-012AA

Drain-source On Resistance-Max :

0.05Ohm

Max Operating Temperature :

150°C

Continuous Drain Current (ID) :

5.2A

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

5.2A 4.3A

Transistor Application :

SWITCHING

Power Dissipation :

2W

Height :

1.4986mm

Drain to Source Voltage (Vdss) :

20V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

FET Type :

N and P-Channel

Base Part Number :

IRF7307QPBF

Vgs(th) (Max) @ Id :

700mV @ 250μA

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

20V

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

50m Ω @ 2.6A, 4.5V

Mounting Type :

Surface Mount