IRF7307PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

Published :

1997

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

12 Weeks

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Pulsed Drain Current-Max (IDM) :

21A

JEDEC-95 Code :

MS-012AA

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

N and P-Channel

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max (Abs) :

1.4W

Transistor Application :

SWITCHING

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Current - Continuous Drain (Id) @ 25°C :

5.2A 4.3A

Mounting Type :

Surface Mount

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Number of Terminations :

8

Drain Current-Max (Abs) (ID) :

5.2A

Packaging :

Tube

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

50m Ω @ 2.6A, 4.5V

Drain-source On Resistance-Max :

0.05Ohm

Drain to Source Voltage (Vdss) :

20V

Power - Max :

2W

Vgs(th) (Max) @ Id :

700mV @ 250μA

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Base Part Number :

IRF7307PBF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

20V

JESD-30 Code :

R-PDSO-G8

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 15V

FET Feature :

Logic Level Gate

FET Technology :

METAL-OXIDE SEMICONDUCTOR