IRF7306PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Surface Mount :

yes

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

3.6A

Rds On (Max) @ Id, Vgs :

100m Ω @ 1.8A, 10V

Drain Current-Max (Abs) (ID) :

3.6A

Vgs(th) (Max) @ Id :

1V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Mounting Type :

Surface Mount

Published :

1997

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

2 P-Channel (Dual)

Power - Max :

2W

Pulsed Drain Current-Max (IDM) :

14A

Drain to Source Voltage (Vdss) :

30V

JESD-609 Code :

e3

FET Feature :

Logic Level Gate

Terminal Form :

Gull wing

Base Part Number :

IRF7306PBF

Power Dissipation-Max (Abs) :

1.4W

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Factory Lead Time :

14 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.1Ohm

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

8

Additional Feature :

LOGIC LEVEL COMPATIBLE

Number of Elements :

2

Qualification Status :

Not Qualified

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

R-PDSO-G8

JEDEC-95 Code :

MS-012AA

DS Breakdown Voltage-Min :

30V

Series :

HEXFET®