IRF5810TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance :

650pF

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Number of Pins :

6

Packaging :

Tape and Reel (TR)

Power - Max :

960mW

Mount :

Surface Mount

Radiation Hardening :

No

Power Dissipation :

960mW

Continuous Drain Current (ID) :

-2.9A

Drain to Source Resistance :

90mOhm

FET Type :

2 P-Channel (Dual)

Max Power Dissipation :

960mW

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

2.9A

Number of Elements :

2

Supplier Device Package :

6-TSOP

Turn-Off Delay Time :

62 ns

Rise Time :

14ns

Gate Charge (Qg) (Max) @ Vgs :

9.6nC @ 4.5V

Lead Free :

Lead Free

Length :

3mm

Element Configuration :

Dual

Threshold Voltage :

-1.2V

Dual Supply Voltage :

-20V

Base Part Number :

IRF5810PBF

Resistance :

90mOhm

Width :

1.4986mm

Gate to Source Voltage (Vgs) :

12V

Termination :

SMD/SMT

Rds On Max :

90 mΩ

Package / Case :

SOT-23-6 Thin, TSOT-23-6

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

20V

Min Operating Temperature :

-55°C

FET Feature :

Logic Level Gate

Published :

2003

Fall Time (Typ) :

53 ns

Rds On (Max) @ Id, Vgs :

90mOhm @ 2.9A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 16V

Height :

990.6μm

Turn On Delay Time :

8.2 ns

Series :

HEXFET®

Drain to Source Breakdown Voltage :

-20V

Nominal Vgs :

-1.2 V

Vgs(th) (Max) @ Id :

1.2V @ 250µA