IRF3808STRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Pins :

3

Terminal Form :

Gull wing

Factory Lead Time :

14 Weeks

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

16 ns

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

75A

FET Type :

N-Channel

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Number of Terminations :

2

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

550A

Input Capacitance (Ciss) (Max) @ Vds :

5310pF @ 25V

Rise Time :

140ns

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

Height :

4.826mm

Fall Time (Typ) :

120 ns

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

Element Configuration :

Single

Drain-source On Resistance-Max :

0.007Ohm

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

106A Tc

Transistor Element Material :

SILICON

Published :

2007

JESD-30 Code :

R-PSSO-G2

Width :

9.65mm

Continuous Drain Current (ID) :

106A

Length :

10.668mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

75V

Power Dissipation :

200W

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

7m Ω @ 82A, 10V

Power Dissipation-Max :

200W Tc

Time@Peak Reflow Temperature-Max (s) :

30

Turn-Off Delay Time :

68 ns