IRF3007STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

62A Tc

Drain-source On Resistance-Max :

0.0126Ohm

Vgs(th) (Max) @ Id :

4V @ 250µA

Avalanche Energy Rating (Eas) :

946 mJ

Continuous Drain Current (ID) :

62A

Pulsed Drain Current-Max (IDM) :

320A

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Voltage (Vdss) :

75V

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2004

Rds On (Max) @ Id, Vgs :

12.6m Ω @ 48A, 10V

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

75V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Mount :

Surface Mount

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Power Dissipation-Max :

120W Tc

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

3270pF @ 25V

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

2

Series :

HEXFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Terminal Form :

Gull wing