IRF3205L

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

55V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Number of Elements :

1

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

146nC @ 10V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.008Ohm

Published :

2001

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

264 mJ

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

200W Tc

JESD-30 Code :

R-PSIP-T3

Drain to Source Voltage (Vdss) :

55V

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Series :

HEXFET®

Terminal Position :

Single

Number of Terminations :

3

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

390A

Drain Current-Max (Abs) (ID) :

75A

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Transistor Application :

SWITCHING

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

3247pF @ 25V

Terminal Finish :

Tin/Lead (Sn/Pb)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e0

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

8m Ω @ 62A, 10V

Peak Reflow Temperature (Cel) :

225

HTS Code :

8541.29.00.95