IRF3000
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- Mfr.Part #
- IRF3000
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 1.6A 8SO
- Stock
- 43,042
- In Stock ：
- 43,042
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- HEXFET®
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 400mOhm @ 960mA, 10V
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 300V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 2.5W Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 10V
- Vgs (Max) :
- ±30V
- Current - Continuous Drain (Id) @ 25°C :
- 1.6A Ta
- Published :
- 2002
- Supplier Device Package :
- 8-SO
- RoHS Status :
- Non-RoHS Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 730pF @ 25V
- Datasheets
- IRF3000
N-Channel Tube 400mOhm @ 960mA, 10V ±30V 730pF @ 25V 33nC @ 10V 300V 8-SOIC (0.154, 3.90mm Width)
IRF3000 Description
IRF3000 is a 300V N-MOSFET HEXFET MOSFET. The IRF3000 can replace electromechanical relays in many telecommunications and networking applications. As it is a solid-state semiconductor device with no mechanical parts, it increases the reliability of the entire system while being 30% smaller than an electromechanical relay.
The IRF3000 is more efficient than electromechanical relays, with an open-state resistance 90% lower than electromechanical relays, minimizing conduction losses. The ultra-low gate charge in turn minimizes switching losses. The IRF3000 is easier to drive than an electromechanical relay, simplifying the circuit and reducing system costs.
IRF3000 Features
-
Type Designator: IRF3000
-
Type of Transistor: MOSFET
-
Type of Control Channel: N -Channel
-
Maximum Power Dissipation (Pd): 2.5 W
-
Maximum Drain-Source Voltage |Vds|: 300 V
-
Maximum Gate-Source Voltage |Vgs|: 30 V
-
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
-
Maximum Drain Current |Id|: 1.6 A
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Maximum Junction Temperature (Tj): 150 °C
-
Rise Time (tr): 7.2 nS
-
Drain-Source Capacitance (Cd): 940 pF
-
Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm
-
Package: SO8
IRF3000 Applications
-
High-frequency DC-DC converters
-
DC to DC Converter
-
Switched Mode Power Supplies
-
Motor Drivers
-
Battery charger circuits
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