IRF3205PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

55V

Threshold Voltage :

4V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Input Capacitance (Ciss) (Max) @ Vds :

3247pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

65 ns

Height :

19.8mm

Power Dissipation-Max :

200W Tc

Voltage - Rated DC :

55V

Series :

HEXFET®

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

50 ns

Case Connection :

DRAIN

Nominal Vgs :

4 V

Transistor Element Material :

SILICON

Resistance :

8mOhm

Current Rating :

110A

Continuous Drain Current (ID) :

110A

Termination :

Through Hole

Packaging :

Tube

Length :

10.54mm

JEDEC-95 Code :

TO-220AB

Turn On Delay Time :

14 ns

Lead Pitch :

2.54mm

Factory Lead Time :

12 Weeks

Max Junction Temperature (Tj) :

175°C

Width :

4.69mm

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

REACH SVHC :

No SVHC

Dual Supply Voltage :

55V

Drain Current-Max (Abs) (ID) :

75A

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

8m Ω @ 62A, 10V

Package / Case :

TO-220-3

Recovery Time :

104 ns

ECCN Code :

EAR99

Rise Time :

101ns

Radiation Hardening :

No

Published :

2001

Mount :

Through Hole

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

150W

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Channels :

1

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

146nC @ 10V

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

264 mJ

Lead Free :

Contains Lead, Lead Free

Number of Terminations :

3

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA