IRF3007PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Published :

2002

Fall Time (Typ) :

49 ns

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-220AB

Series :

HEXFET®

Power Dissipation :

200W

Power Dissipation-Max :

200W Tc

Package / Case :

TO-220-3

Number of Pins :

3

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Packaging :

Tube

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current Rating :

80A

Height :

16.51mm

Number of Terminations :

2

Mounting Type :

Through Hole

Voltage - Rated DC :

75V

Factory Lead Time :

14 Weeks

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

12.6m Ω @ 48A, 10V

Continuous Drain Current (ID) :

75A

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Dual Supply Voltage :

75V

Case Connection :

DRAIN

Rise Time :

80ns

Mount :

Through Hole

Nominal Vgs :

4 V

Element Configuration :

Single

ECCN Code :

EAR99

Terminal Form :

Gull wing

Turn-Off Delay Time :

55 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

75V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

3270pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G2

Length :

10.668mm

Width :

4.826mm

Resistance :

12.6Ohm

Avalanche Energy Rating (Eas) :

280 mJ

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Turn On Delay Time :

12 ns

RoHS Status :

ROHS3 Compliant