IRF3205STRLPBF
- Mfr.Part #
- IRF3205STRLPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IRF3205 - 12V-300V N-CHANNEL POW
- Stock
- 21,490
- In Stock :
- 21,490
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 50 ns
- Threshold Voltage :
- 4V
- Radiation Hardening :
- No
- Power Dissipation :
- 200W
- Gate Charge (Qg) (Max) @ Vgs :
- 146nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Temperature :
- -55°C~175°C TJ
- Fall Time (Typ) :
- 65 ns
- Lead Free :
- Contains Lead, Lead Free
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Input Capacitance (Ciss) (Max) @ Vds :
- 3247pF @ 25V
- Nominal Vgs :
- 4 V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Dual Supply Voltage :
- 55V
- FET Type :
- N-Channel
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Series :
- HEXFET®
- JEDEC-95 Code :
- TO-252
- Gate to Source Voltage (Vgs) :
- 20V
- Current Rating :
- 110A
- JESD-30 Code :
- R-PSSO-G2
- Number of Pins :
- 3
- Rise Time :
- 101ns
- Element Configuration :
- Single
- Case Connection :
- DRAIN
- Published :
- 2001
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Height :
- 5.084mm
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- REACH SVHC :
- No SVHC
- Drain Current-Max (Abs) (ID) :
- 75A
- Number of Terminations :
- 2
- Terminal Form :
- Gull wing
- Number of Channels :
- 1
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 55V
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 200W Tc
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 62A, 10V
- Recovery Time :
- 104 ns
- Avalanche Energy Rating (Eas) :
- 264 mJ
- Termination :
- SMD/SMT
- Width :
- 10.54mm
- Mount :
- Surface Mount
- Voltage - Rated DC :
- 55V
- Continuous Drain Current (ID) :
- 110A
- Max Junction Temperature (Tj) :
- 175°C
- Factory Lead Time :
- 12 Weeks
- Length :
- 10.668mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Turn On Delay Time :
- 14 ns
- Resistance :
- 8mOhm
- Datasheets
- IRF3205STRLPBF

N-Channel Tape & Reel (TR) 8m Ω @ 62A, 10V ±20V 3247pF @ 25V 146nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
The IRF3205STRLPBF is a HEXFET? single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF3205L) is available for low-profile applications.
IRF3205STRLPBF Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
IRF3205STRLPBF Applications
● Power Management
● New Energy Vehicle
● Photovoltaic & Wind Power Generation
● Smart Grid
● Switching
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