IRF3205STRLPBF

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Mfr.Part #
IRF3205STRLPBF
Manufacturer
International Rectifier
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
IRF3205 - 12V-300V N-CHANNEL POW
Stock
21,490
In Stock :
21,490

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Manufacturer :
International Rectifier
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements :
1
ECCN Code :
EAR99
Turn-Off Delay Time :
50 ns
Threshold Voltage :
4V
Radiation Hardening :
No
Power Dissipation :
200W
Gate Charge (Qg) (Max) @ Vgs :
146nC @ 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Operating Temperature :
-55°C~175°C TJ
Fall Time (Typ) :
65 ns
Lead Free :
Contains Lead, Lead Free
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Input Capacitance (Ciss) (Max) @ Vds :
3247pF @ 25V
Nominal Vgs :
4 V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
JESD-609 Code :
e3
Dual Supply Voltage :
55V
FET Type :
N-Channel
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Series :
HEXFET®
JEDEC-95 Code :
TO-252
Gate to Source Voltage (Vgs) :
20V
Current Rating :
110A
JESD-30 Code :
R-PSSO-G2
Number of Pins :
3
Rise Time :
101ns
Element Configuration :
Single
Case Connection :
DRAIN
Published :
2001
Transistor Element Material :
SILICON
Vgs (Max) :
±20V
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Height :
5.084mm
Current - Continuous Drain (Id) @ 25°C :
110A Tc
REACH SVHC :
No SVHC
Drain Current-Max (Abs) (ID) :
75A
Number of Terminations :
2
Terminal Form :
Gull wing
Number of Channels :
1
Transistor Application :
SWITCHING
Drain to Source Breakdown Voltage :
55V
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max :
200W Tc
Rds On (Max) @ Id, Vgs :
8m Ω @ 62A, 10V
Recovery Time :
104 ns
Avalanche Energy Rating (Eas) :
264 mJ
Termination :
SMD/SMT
Width :
10.54mm
Mount :
Surface Mount
Voltage - Rated DC :
55V
Continuous Drain Current (ID) :
110A
Max Junction Temperature (Tj) :
175°C
Factory Lead Time :
12 Weeks
Length :
10.668mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Peak Reflow Temperature (Cel) :
260
Time@Peak Reflow Temperature-Max (s) :
30
Turn On Delay Time :
14 ns
Resistance :
8mOhm
Datasheets
IRF3205STRLPBF
Introducing Transistors - FETs, MOSFETs - Single International Rectifier IRF3205STRLPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Pins:3, Number of Terminations:2, Number of Channels:1, IRF3205STRLPBF pinout, IRF3205STRLPBF datasheet PDF, IRF3205STRLPBF amp .Beyond Transistors - FETs, MOSFETs - Single International Rectifier IRF3205STRLPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

International Rectifier IRF3205STRLPBF


N-Channel Tape & Reel (TR) 8m Ω @ 62A, 10V ±20V 3247pF @ 25V 146nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF3205STRLPBF Description

The IRF3205STRLPBF is a HEXFET? single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF3205L) is available for low-profile applications.

IRF3205STRLPBF Features

● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free



IRF3205STRLPBF Applications

● Power Management
● New Energy Vehicle
● Photovoltaic & Wind Power Generation
● Smart Grid
● Switching
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