IRF3205LPBF

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Mfr.Part #
IRF3205LPBF
Manufacturer
Infineon Technologies
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Datasheet
Download
Description
MOSFET N-CH 55V 110A TO262
Stock
1,912
In Stock :
1,912

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Time@Peak Reflow Temperature-Max (s) :
30
Configuration :
SINGLE WITH BUILT-IN DIODE
Case Connection :
DRAIN
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Drain Current-Max (Abs) (ID) :
75A
Drain-source On Resistance-Max :
0.008Ohm
Vgs (Max) :
±20V
Height :
9.65mm
Gate Charge (Qg) (Max) @ Vgs :
146nC @ 10V
Power Dissipation :
200W
Number of Terminations :
3
RoHS Status :
ROHS3 Compliant
Input Capacitance (Ciss) (Max) @ Vds :
3247pF @ 25V
Rds On (Max) @ Id, Vgs :
8m Ω @ 62A, 10V
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Drain to Source Breakdown Voltage :
55V
Length :
10.668mm
Voltage - Rated DC :
55V
Number of Pins :
3
Packaging :
Tube
Power Dissipation-Max :
200W Tc
Published :
2002
FET Type :
N-Channel
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Series :
HEXFET®
Radiation Hardening :
No
Gate to Source Voltage (Vgs) :
20V
Operating Mode :
ENHANCEMENT MODE
Fall Time (Typ) :
65 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Operating Temperature :
-55°C~175°C TJ
Vgs(th) (Max) @ Id :
4V @ 250µA
Threshold Voltage :
4V
Avalanche Energy Rating (Eas) :
264 mJ
Peak Reflow Temperature (Cel) :
260
Width :
4.826mm
Mounting Type :
Through Hole
Transistor Application :
SWITCHING
Terminal Position :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Elements :
1
Turn On Delay Time :
14 ns
REACH SVHC :
No SVHC
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Rise Time :
101ns
Mount :
Through Hole
JESD-609 Code :
e3
Package / Case :
TO-262-3 Long Leads, I2Pak, TO-262AA
Turn-Off Delay Time :
50 ns
Continuous Drain Current (ID) :
110A
Current Rating :
110A
Factory Lead Time :
14 Weeks
Datasheets
IRF3205LPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF3205LPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Package / Case:TO-262-3 Long Leads, I2Pak, TO-262AA, IRF3205LPBF pinout, IRF3205LPBF datasheet PDF, IRF3205LPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF3205LPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF3205LPBF


N-Channel Tube 8m Ω @ 62A, 10V ±20V 3247pF @ 25V 146nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA

IRF3205LPBF Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 264 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3247pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 110A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 55V, and this device has a drainage-to-source breakdown voltage of 55VV.Drain current refers to the maximum continuous current a device can conduct, and it is 75A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 50 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IRF3205LPBF Features


the avalanche energy rating (Eas) is 264 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 50 ns
a threshold voltage of 4V


IRF3205LPBF Applications


There are a lot of Infineon Technologies
IRF3205LPBF applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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