IRF3205STRLPBF
- Mfr.Part #
- IRF3205STRLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 110A D2PAK
- Stock
- 8,807
- In Stock :
- 8,807
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- JEDEC-95 Code :
- TO-252
- Operating Temperature :
- -55°C~175°C TJ
- JESD-609 Code :
- e3
- Recovery Time :
- 104 ns
- JESD-30 Code :
- R-PSSO-G2
- Number of Channels :
- 1
- Number of Terminations :
- 2
- Length :
- 10.668mm
- Threshold Voltage :
- 4V
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 62A, 10V
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 264 mJ
- Voltage - Rated DC :
- 55V
- Gate to Source Voltage (Vgs) :
- 20V
- Case Connection :
- DRAIN
- Max Junction Temperature (Tj) :
- 175°C
- Packaging :
- Tape and Reel (TR)
- Termination :
- SMD/SMT
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 200W Tc
- Dual Supply Voltage :
- 55V
- Continuous Drain Current (ID) :
- 110A
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 10.54mm
- ECCN Code :
- EAR99
- Lead Free :
- Contains Lead, Lead Free
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 146nC @ 10V
- Nominal Vgs :
- 4 V
- Power Dissipation :
- 200W
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 12 Weeks
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 110A
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Height :
- 5.084mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 65 ns
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 50 ns
- Drain Current-Max (Abs) (ID) :
- 75A
- FET Type :
- N-Channel
- Mount :
- Surface Mount
- Resistance :
- 8mOhm
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Input Capacitance (Ciss) (Max) @ Vds :
- 3247pF @ 25V
- Transistor Application :
- SWITCHING
- Series :
- HEXFET®
- Drain to Source Breakdown Voltage :
- 55V
- Rise Time :
- 101ns
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 14 ns
- Published :
- 2001
- Datasheets
- IRF3205STRLPBF

N-Channel Tape & Reel (TR) 8m Ω @ 62A, 10V ±20V 3247pF @ 25V 146nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
The IRF3205STRLPBF is a HEXFET? single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF3205L) is available for low-profile applications.
IRF3205STRLPBF Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
IRF3205STRLPBF Applications
● Power Management
● New Energy Vehicle
● Photovoltaic & Wind Power Generation
● Smart Grid
● Switching
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