IRF3205STRLPBF

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Mfr.Part #
IRF3205STRLPBF
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 55V 110A D2PAK
Stock
8,807
In Stock :
8,807

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
JEDEC-95 Code :
TO-252
Operating Temperature :
-55°C~175°C TJ
JESD-609 Code :
e3
Recovery Time :
104 ns
JESD-30 Code :
R-PSSO-G2
Number of Channels :
1
Number of Terminations :
2
Length :
10.668mm
Threshold Voltage :
4V
Rds On (Max) @ Id, Vgs :
8m Ω @ 62A, 10V
Terminal Form :
Gull wing
Element Configuration :
Single
Avalanche Energy Rating (Eas) :
264 mJ
Voltage - Rated DC :
55V
Gate to Source Voltage (Vgs) :
20V
Case Connection :
DRAIN
Max Junction Temperature (Tj) :
175°C
Packaging :
Tape and Reel (TR)
Termination :
SMD/SMT
Mounting Type :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Power Dissipation-Max :
200W Tc
Dual Supply Voltage :
55V
Continuous Drain Current (ID) :
110A
Peak Reflow Temperature (Cel) :
260
Width :
10.54mm
ECCN Code :
EAR99
Lead Free :
Contains Lead, Lead Free
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
146nC @ 10V
Nominal Vgs :
4 V
Power Dissipation :
200W
REACH SVHC :
No SVHC
Factory Lead Time :
12 Weeks
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current Rating :
110A
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Height :
5.084mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Fall Time (Typ) :
65 ns
Radiation Hardening :
No
Turn-Off Delay Time :
50 ns
Drain Current-Max (Abs) (ID) :
75A
FET Type :
N-Channel
Mount :
Surface Mount
Resistance :
8mOhm
Time@Peak Reflow Temperature-Max (s) :
30
Input Capacitance (Ciss) (Max) @ Vds :
3247pF @ 25V
Transistor Application :
SWITCHING
Series :
HEXFET®
Drain to Source Breakdown Voltage :
55V
Rise Time :
101ns
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Turn On Delay Time :
14 ns
Published :
2001
Datasheets
IRF3205STRLPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF3205STRLPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~175°C TJ, Number of Channels:1, Number of Terminations:2, Mounting Type:Surface Mount, Number of Pins:3, IRF3205STRLPBF pinout, IRF3205STRLPBF datasheet PDF, IRF3205STRLPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF3205STRLPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF3205STRLPBF


N-Channel Tape & Reel (TR) 8m Ω @ 62A, 10V ±20V 3247pF @ 25V 146nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF3205STRLPBF Description

The IRF3205STRLPBF is a HEXFET? single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF3205L) is available for low-profile applications.

IRF3205STRLPBF Features

● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free



IRF3205STRLPBF Applications

● Power Management
● New Energy Vehicle
● Photovoltaic & Wind Power Generation
● Smart Grid
● Switching
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