IRF3007SPBF
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- Mfr.Part #
- IRF3007SPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 62A D2PAK
- Stock
- 5,498
- In Stock ：
- 5,498
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 75V
- Turn On Delay Time :
- 12 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Surface Mount
- Vgs (Max) :
- ±20V
- Published :
- 2010
- Rise Time :
- 80ns
- Packaging :
- Tube
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Length :
- 10.668mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 3270pF @ 25V
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Current Rating :
- 62A
- Continuous Drain Current (ID) :
- 62A
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~175°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Voltage - Rated DC :
- 75V
- Power Dissipation :
- 120W
- Current - Continuous Drain (Id) @ 25°C :
- 62A Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation-Max :
- 120W Tc
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 12.6m Ω @ 48A, 10V
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Height :
- 4.572mm
- Fall Time (Typ) :
- 49 ns
- Series :
- HEXFET®
- Turn-Off Delay Time :
- 55 ns
- Factory Lead Time :
- 14 Weeks
- Width :
- 9.65mm
- Datasheets
- IRF3007SPBF
N-Channel Tube 12.6m Ω @ 48A, 10V ±20V 3270pF @ 25V 130nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF3007SPBF Overview
A device's maximum input capacitance is 3270pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 62A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=75V, and this device has a drain-to-source breakdown voltage of 75V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 55 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
IRF3007SPBF Features
a continuous drain current (ID) of 62A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 55 ns
IRF3007SPBF Applications
There are a lot of Infineon Technologies
IRF3007SPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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