IRF3808STRLPBF

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Mfr.Part #
IRF3808STRLPBF
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 75V 106A D2PAK
Stock
5,445
In Stock :
5,445

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
220nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate to Source Voltage (Vgs) :
20V
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Packaging :
Tape and Reel (TR)
Vgs (Max) :
±20V
Series :
HEXFET®
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Pulsed Drain Current-Max (IDM) :
550A
Number of Terminations :
2
Drain Current-Max (Abs) (ID) :
75A
Mount :
Surface Mount
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rise Time :
140ns
Case Connection :
DRAIN
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Width :
9.65mm
Turn On Delay Time :
16 ns
Turn-Off Delay Time :
68 ns
Number of Channels :
1
JESD-609 Code :
e3
Terminal Form :
Gull wing
Published :
2013
Transistor Element Material :
SILICON
Factory Lead Time :
12 Weeks
Drain to Source Breakdown Voltage :
75V
Fall Time (Typ) :
120 ns
Resistance :
7mOhm
Length :
10.668mm
Peak Reflow Temperature (Cel) :
260
Operating Mode :
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs :
7m Ω @ 82A, 10V
Max Junction Temperature (Tj) :
175°C
Operating Temperature :
-55°C~175°C TJ
Height :
4.83mm
Number of Pins :
3
Power Dissipation-Max :
200W Tc
Vgs(th) (Max) @ Id :
4V @ 250µA
Mounting Type :
Surface Mount
JESD-30 Code :
R-PSSO-G2
Continuous Drain Current (ID) :
106A
Current - Continuous Drain (Id) @ 25°C :
106A Tc
Threshold Voltage :
4V
Power Dissipation :
200W
Radiation Hardening :
No
Time@Peak Reflow Temperature-Max (s) :
30
Element Configuration :
Single
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
5310pF @ 25V
Datasheets
IRF3808STRLPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF3808STRLPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Channels:1, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Mounting Type:Surface Mount, IRF3808STRLPBF pinout, IRF3808STRLPBF datasheet PDF, IRF3808STRLPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF3808STRLPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF3808STRLPBF


N-Channel Tape & Reel (TR) 7m Ω @ 82A, 10V ±20V 5310pF @ 25V 220nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF3808STRLPBF Overview


A device's maximal input capacitance is 5310pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 106A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 75V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 75A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 68 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 550A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 16 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).

IRF3808STRLPBF Features


a continuous drain current (ID) of 106A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 550A.
a threshold voltage of 4V


IRF3808STRLPBF Applications


There are a lot of Infineon Technologies
IRF3808STRLPBF applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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