IRF3808SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Rise Time :

140ns

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

550A

Dual Supply Voltage :

75V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Nominal Vgs :

4 V

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Series :

HEXFET®

Terminal Form :

Gull wing

Voltage - Rated DC :

75V

Power Dissipation :

200W

Height :

4.826mm

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

75A

Transistor Element Material :

SILICON

Threshold Voltage :

4V

Resistance :

7mOhm

Turn On Delay Time :

16 ns

Power Dissipation-Max :

200W Tc

Continuous Drain Current (ID) :

106A

Packaging :

Tube

Published :

2002

Mount :

Surface Mount

Length :

10.668mm

Fall Time (Typ) :

120 ns

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Input Capacitance (Ciss) (Max) @ Vds :

5310pF @ 25V

Rds On (Max) @ Id, Vgs :

7m Ω @ 82A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

RoHS Status :

ROHS3 Compliant

Width :

9.65mm

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Reverse Recovery Time :

93 ns

Termination :

SMD/SMT

Current Rating :

106A

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Number of Pins :

3

Number of Elements :

1

Drain to Source Breakdown Voltage :

75V

Case Connection :

DRAIN

Turn-Off Delay Time :

68 ns

Current - Continuous Drain (Id) @ 25°C :

106A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE