IRF3808PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

140A

Rise Time :

140ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Length :

10.668mm

Published :

2002

Power Dissipation-Max :

330W Tc

Current - Continuous Drain (Id) @ 25°C :

140A Tc

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Nominal Vgs :

4 V

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

550A

Power Dissipation :

330W

Vgs (Max) :

±20V

ECCN Code :

EAR99

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

7m Ω @ 82A, 10V

Package / Case :

TO-220-3

Voltage - Rated DC :

75V

Resistance :

7Ohm

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

75A

Drain to Source Breakdown Voltage :

75V

Width :

4.826mm

Number of Pins :

3

Series :

HEXFET®

Continuous Drain Current (ID) :

140A

FET Type :

N-Channel

Mount :

Through Hole

Threshold Voltage :

4V

Input Capacitance (Ciss) (Max) @ Vds :

5310pF @ 25V

Turn On Delay Time :

16 ns

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Dual Supply Voltage :

75V

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

120 ns

Lead Free :

Lead Free

Number of Terminations :

3

Transistor Element Material :

SILICON

Height :

16.51mm

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

68 ns

Factory Lead Time :

12 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V