IRF3805STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Vgs (Max) :

±20V

Nominal Vgs :

4 V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Width :

9.65mm

Published :

2004

Turn-Off Delay Time :

87 ns

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

Fall Time (Typ) :

87 ns

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

75A

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 75A, 10V

FET Type :

N-Channel

Threshold Voltage :

4V

Mounting Type :

Surface Mount

Mount :

Surface Mount

Factory Lead Time :

12 Weeks

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Length :

10.668mm

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

7960pF @ 25V

Turn On Delay Time :

20 ns

Transistor Application :

SWITCHING

Forward Voltage :

1.3V

Avalanche Energy Rating (Eas) :

940 mJ

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

260

Rise Time :

20ns

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

890A

Current Rating :

75A

REACH SVHC :

No SVHC

Number of Pins :

3

Number of Elements :

1

Height :

4.699mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

300W Tc

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

55V

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Voltage - Rated DC :

55V

Series :

HEXFET®

Resistance :

3.3MOhm

Gate Charge (Qg) (Max) @ Vgs :

290nC @ 10V

Power Dissipation :

130W

Case Connection :

DRAIN

Radiation Hardening :

No

Lead Free :

Contains Lead