IRF3805S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

890A

Input Capacitance (Ciss) (Max) @ Vds :

7960pF @ 25V

JESD-609 Code :

e0

Number of Terminations :

2

RoHS Status :

Non-RoHS Compliant

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

290nC @ 10V

ECCN Code :

EAR99

HTS Code :

8541.29.00.95

Drain Current-Max (Abs) (ID) :

75A

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Terminal Finish :

Tin/Lead (Sn/Pb)

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

55V

Drain to Source Voltage (Vdss) :

55V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Packaging :

Tube

Power Dissipation-Max :

330W Tc

Drain-source On Resistance-Max :

0.0033Ohm

Vgs (Max) :

±20V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

940 mJ

FET Type :

N-Channel

Terminal Position :

Single

Terminal Form :

Gull wing

Surface Mount :

yes

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

225

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 75A, 10V

Series :

HEXFET®

Published :

2007

Transistor Application :

SWITCHING