IRF3805S-7PPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Power Dissipation-Max :

300W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

30

Drain Current-Max (Abs) (ID) :

160A

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

680 mJ

Published :

2006

Series :

HEXFET®

Drain to Source Voltage (Vdss) :

55V

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

55V

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.0026Ohm

Pulsed Drain Current-Max (IDM) :

1000A

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

7820pF @ 25V

JESD-30 Code :

R-PSSO-G6

JESD-609 Code :

e3

Terminal Form :

Gull wing

Case Connection :

DRAIN

FET Type :

N-Channel

Qualification Status :

Not Qualified

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 140A, 10V

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Surface Mount :

yes

Transistor Element Material :

SILICON

Number of Terminations :

6

Packaging :

Tube

Terminal Position :

Single

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier