IRF3805PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.668mm

Height :

9.017mm

Width :

4.826mm

Element Configuration :

Single

Number of Terminations :

3

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

940 mJ

Turn-Off Delay Time :

93 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

55V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

JEDEC-95 Code :

TO-220AB

Threshold Voltage :

4V

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 75A, 10V

Lead Free :

Lead Free

Packaging :

Tube

Mounting Type :

Through Hole

Fall Time (Typ) :

78 ns

Power Dissipation-Max :

300W Tc

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

890A

Transistor Element Material :

SILICON

Series :

HEXFET®

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

7960pF @ 25V

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

290nC @ 10V

Continuous Drain Current (ID) :

75A

Published :

2007

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Resistance :

3.3MOhm

FET Type :

N-Channel

Power Dissipation :

130W

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Radiation Hardening :

No

Number of Elements :

1

Rise Time :

20ns

Turn On Delay Time :

150 ns