IRF3805LPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

20ns

Length :

10.668mm

Drain to Source Voltage (Vdss) :

55V

Mount :

Through Hole

Mounting Type :

Through Hole

Max Operating Temperature :

175°C

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

7960pF @ 25V

Vgs (Max) :

±20V

Radiation Hardening :

No

Continuous Drain Current (ID) :

75A

Packaging :

Tube

Supplier Device Package :

TO-262

Fall Time (Typ) :

87 ns

Min Operating Temperature :

-55°C

Published :

2004

Power Dissipation :

130W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

3.3mOhm @ 75A, 10V

Turn-Off Delay Time :

93 ns

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Width :

4.826mm

Number of Elements :

1

Rds On Max :

3.3 mΩ

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

150 ns

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Drain to Source Resistance :

3.3MOhm

Drain to Source Breakdown Voltage :

55V

Series :

HEXFET®

Height :

9.65mm

Power Dissipation-Max :

300W Tc

Input Capacitance :

7.96nF

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

290nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)