IRF3717TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.5W Ta

Pulsed Drain Current-Max (IDM) :

160A

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 4.5V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.45V @ 250μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2890pF @ 10V

Rds On (Max) @ Id, Vgs :

4.4m Ω @ 20A, 10V

Number of Elements :

1

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

20A Ta

DS Breakdown Voltage-Min :

20V

Drain to Source Voltage (Vdss) :

20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Published :

2004

Avalanche Energy Rating (Eas) :

32 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

20A

Additional Feature :

Green

FET Type :

N-Channel

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

MS-012AA

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-G8

Transistor Application :

SWITCHING

Series :

HEXFET®

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.0044Ohm