IRF3717TR
- Mfr.Part #
- IRF3717TR
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 20A 8SO
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Lead Free :
- Contains Lead
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 20A
- Number of Terminations :
- 8
- Published :
- 2004
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 20A Ta
- Mounting Type :
- Surface Mount
- Rise Time :
- 14ns
- Drain-source On Resistance-Max :
- 0.0044Ohm
- Rds On (Max) @ Id, Vgs :
- 4.4m Ω @ 20A, 10V
- Avalanche Energy Rating (Eas) :
- 32 mJ
- Terminal Position :
- Dual
- Vgs (Max) :
- ±20V
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JEDEC-95 Code :
- MS-012AA
- RoHS Status :
- Non-RoHS Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Current Rating :
- 20A
- Input Capacitance (Ciss) (Max) @ Vds :
- 2890pF @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 4.5V
- Mount :
- Surface Mount
- Additional Feature :
- Green
- Series :
- HEXFET®
- Pulsed Drain Current-Max (IDM) :
- 160A
- Voltage - Rated DC :
- 20V
- Power Dissipation-Max :
- 2.5W Ta
- Number of Pins :
- 8
- FET Type :
- N-Channel
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 2.45V @ 250μA
- Datasheets
- IRF3717TR

N-Channel Tape & Reel (TR) 4.4m Ω @ 20A, 10V ±20V 2890pF @ 10V 33nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
IRF3717TR Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 32 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2890pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 20A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 160A.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
IRF3717TR Features
the avalanche energy rating (Eas) is 32 mJ
a continuous drain current (ID) of 20A
based on its rated peak drain current 160A.
IRF3717TR Applications
There are a lot of Infineon Technologies
IRF3717TR applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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