IRF3717TR

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Mfr.Part #
IRF3717TR
Manufacturer
Infineon Technologies
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 20V 20A 8SO
Stock
1
In Stock :
1

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Lead Free :
Contains Lead
Transistor Application :
SWITCHING
Continuous Drain Current (ID) :
20A
Number of Terminations :
8
Published :
2004
Packaging :
Tape and Reel (TR)
Current - Continuous Drain (Id) @ 25°C :
20A Ta
Mounting Type :
Surface Mount
Rise Time :
14ns
Drain-source On Resistance-Max :
0.0044Ohm
Rds On (Max) @ Id, Vgs :
4.4m Ω @ 20A, 10V
Avalanche Energy Rating (Eas) :
32 mJ
Terminal Position :
Dual
Vgs (Max) :
±20V
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JEDEC-95 Code :
MS-012AA
RoHS Status :
Non-RoHS Compliant
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Current Rating :
20A
Input Capacitance (Ciss) (Max) @ Vds :
2890pF @ 10V
Operating Temperature :
-55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 4.5V
Mount :
Surface Mount
Additional Feature :
Green
Series :
HEXFET®
Pulsed Drain Current-Max (IDM) :
160A
Voltage - Rated DC :
20V
Power Dissipation-Max :
2.5W Ta
Number of Pins :
8
FET Type :
N-Channel
Terminal Form :
Gull wing
Transistor Element Material :
SILICON
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Elements :
1
Vgs(th) (Max) @ Id :
2.45V @ 250μA
Datasheets
IRF3717TR
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF3717TR from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Terminations:8, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:8, IRF3717TR pinout, IRF3717TR datasheet PDF, IRF3717TR amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF3717TR ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF3717TR


N-Channel Tape & Reel (TR) 4.4m Ω @ 20A, 10V ±20V 2890pF @ 10V 33nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)

IRF3717TR Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 32 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2890pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 20A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 160A.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

IRF3717TR Features


the avalanche energy rating (Eas) is 32 mJ
a continuous drain current (ID) of 20A
based on its rated peak drain current 160A.


IRF3717TR Applications


There are a lot of Infineon Technologies
IRF3717TR applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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