IRF3717PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

20V

Width :

3.9878mm

Fall Time (Typ) :

6 ns

Height :

1.4986mm

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

15 ns

Lead Free :

Contains Lead, Lead Free

Terminal Form :

Gull wing

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 4.5V

Turn On Delay Time :

12 ns

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Number of Elements :

1

Rise Time :

14ns

Current Rating :

20A

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

2890pF @ 10V

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.45V @ 250μA

Mount :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Resistance :

4.4mOhm

Series :

HEXFET®

Power Dissipation :

2.5W

Avalanche Energy Rating (Eas) :

32 mJ

Length :

4.9784mm

Recovery Time :

32 ns

Terminal Position :

Dual

Power Dissipation-Max :

2.5W Ta

Rds On (Max) @ Id, Vgs :

4.4m Ω @ 20A, 10V

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

2 V

Threshold Voltage :

2V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Published :

2004

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tube

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Continuous Drain Current (ID) :

20A

Mounting Type :

Surface Mount

Voltage - Rated DC :

20V

ECCN Code :

EAR99

Element Configuration :

Single

Number of Terminations :

8