IRF3717

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 4.5V

Drain Current-Max (Abs) (ID) :

20A

Surface Mount :

yes

Vgs(th) (Max) @ Id :

2.45V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

2890pF @ 10V

Pulsed Drain Current-Max (IDM) :

160A

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Avalanche Energy Rating (Eas) :

32 mJ

Rds On (Max) @ Id, Vgs :

4.4m Ω @ 20A, 10V

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Mounting Type :

Surface Mount

Series :

HEXFET®

Packaging :

Tube

JESD-30 Code :

R-PDSO-G8

Number of Elements :

1

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

20V

Qualification Status :

Not Qualified

Power Dissipation-Max :

2.5W Ta

JESD-609 Code :

e0

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

HTS Code :

8541.29.00.95

DS Breakdown Voltage-Min :

20V

Peak Reflow Temperature (Cel) :

245

Terminal Position :

Dual

RoHS Status :

Non-RoHS Compliant

Terminal Finish :

TIN LEAD

Transistor Element Material :

SILICON

JEDEC-95 Code :

MS-012AA

Number of Terminations :

8

Drain-source On Resistance-Max :

0.0044Ohm

Vgs (Max) :

±20V

ECCN Code :

EAR99

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Published :

2004