IRF3711ZSPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

16ns

Voltage - Rated DC :

20V

Mounting Type :

Surface Mount

Height :

4.699mm

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

20V

Dual Supply Voltage :

20V

Drain to Source Voltage (Vdss) :

20V

REACH SVHC :

No SVHC

RoHS Status :

RoHS Compliant

Recovery Time :

24 ns

Resistance :

6mOhm

Series :

HEXFET®

FET Type :

N-Channel

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 4.5V

Max Operating Temperature :

175°C

Number of Elements :

1

Turn On Delay Time :

12 ns

Continuous Drain Current (ID) :

92A

Turn-Off Delay Time :

15 ns

Radiation Hardening :

No

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Fall Time (Typ) :

5.4 ns

Element Configuration :

Single

Input Capacitance :

2.15nF

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Width :

9.65mm

Number of Pins :

3

Min Operating Temperature :

-55°C

Rds On Max :

6 mΩ

Length :

10.668mm

Power Dissipation-Max :

79W Tc

Nominal Vgs :

2 V

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

2150pF @ 10V

Rds On (Max) @ Id, Vgs :

6mOhm @ 15A, 10V

Drain to Source Resistance :

7.3mOhm

Published :

2003

Current - Continuous Drain (Id) @ 25°C :

92A Tc

Threshold Voltage :

2V

Supplier Device Package :

D2PAK

Vgs(th) (Max) @ Id :

2.45V @ 250μA

Mount :

Surface Mount

Power Dissipation :

79W

Current Rating :

92A

Operating Temperature :

-55°C~175°C TJ