IRF3711ZPBF
- Mfr.Part #
- IRF3711ZPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 92A TO220AB
- Stock
- 35,504
- In Stock :
- 35,504
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- TO-220AB
- Current Rating :
- 92A
- Drain to Source Resistance :
- 7.3mOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rds On (Max) @ Id, Vgs :
- 6mOhm @ 15A, 10V
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 20V
- Threshold Voltage :
- 2V
- Nominal Vgs :
- 2 V
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Package / Case :
- TO-220-3
- Mount :
- Through Hole
- Turn On Delay Time :
- 12 ns
- Continuous Drain Current (ID) :
- 92A
- Operating Temperature :
- -55°C~175°C TJ
- FET Type :
- N-Channel
- RoHS Status :
- RoHS Compliant
- Fall Time (Typ) :
- 5.4 ns
- Number of Elements :
- 1
- Min Operating Temperature :
- -55°C
- Vgs (Max) :
- ±20V
- Voltage - Rated DC :
- 20V
- Max Operating Temperature :
- 175°C
- Recovery Time :
- 24 ns
- Height :
- 8.77mm
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 4.5V
- Series :
- HEXFET®
- Mounting Type :
- Through Hole
- Resistance :
- 6Ohm
- Power Dissipation :
- 79W
- Drain to Source Breakdown Voltage :
- 20V
- Power Dissipation-Max :
- 79W Tc
- Input Capacitance :
- 2.15nF
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Width :
- 4.69mm
- Published :
- 2003
- Current - Continuous Drain (Id) @ 25°C :
- 92A Tc
- Vgs(th) (Max) @ Id :
- 2.45V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 2150pF @ 10V
- Turn-Off Delay Time :
- 15 ns
- Rise Time :
- 16ns
- Lead Free :
- Lead Free
- Dual Supply Voltage :
- 20V
- Length :
- 10.54mm
- Rds On Max :
- 6 mΩ
- Datasheets
- IRF3711ZPBF

N-Channel Tube 6mOhm @ 15A, 10V ±20V 2150pF @ 10V 24nC @ 4.5V 20V TO-220-3
IRF3711ZPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2150pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 20V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 20V.As a result of its turn-off delay time, which is 15 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 7.3mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 12 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2V.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
IRF3711ZPBF Features
a continuous drain current (ID) of 92A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 7.3mOhm
a threshold voltage of 2V
a 20V drain to source voltage (Vdss)
IRF3711ZPBF Applications
There are a lot of Infineon Technologies
IRF3711ZPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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