IRF3711ZLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

15 ns

Vgs(th) (Max) @ Id :

2.45V @ 250μA

Max Operating Temperature :

175°C

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 4.5V

Operating Temperature :

-55°C~175°C TJ

Rise Time :

16ns

Drain to Source Breakdown Voltage :

20V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Drain to Source Resistance :

7.3mOhm

Series :

HEXFET®

Packaging :

Tube

Fall Time (Typ) :

5.4 ns

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Published :

2004

Supplier Device Package :

TO-262

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

79W

Power Dissipation-Max :

79W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

6mOhm @ 15A, 10V

Element Configuration :

Single

Min Operating Temperature :

-55°C

Input Capacitance (Ciss) (Max) @ Vds :

2150pF @ 10V

FET Type :

N-Channel

Rds On Max :

6 mΩ

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

20V

Number of Pins :

3

Input Capacitance :

2.15nF

Continuous Drain Current (ID) :

92A

Current Rating :

92A

Current - Continuous Drain (Id) @ 25°C :

92A Tc

Voltage - Rated DC :

20V