IRF3711Z
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- Mfr.Part #
- IRF3711Z
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 92A TO220AB
- Stock
- 47,720
- In Stock ：
- 47,720
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Power Dissipation-Max :
- 79W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2003
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-220AB
- Drain to Source Voltage (Vdss) :
- 20V
- RoHS Status :
- Non-RoHS Compliant
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 6mOhm @ 15A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 4.5V
- Vgs(th) (Max) @ Id :
- 2.45V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 2150pF @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 92A Tc
- Series :
- HEXFET®
- Package / Case :
- TO-220-3
- Datasheets
- IRF3711Z
N-Channel Tube 6mOhm @ 15A, 10V ±20V 2150pF @ 10V 24nC @ 4.5V 20V TO-220-3
IRF3711Z Description
IRF3711Z is a 20v HEXFET? Power MOSFET. International Rectifier's logic level gate drive trench HEXFET? power MOSFETs feature benchmark on-state resistance (RDS(on)) and high package current ratings for high power DC motors, power tools, industrial batteries, and power supply applications. The Operating and Storage Temperature Range is between -55 and 175??. And the MOSFET IRF3711Z is in the TO-220AB package with 79W power dissipation.
IRF3711Z Features
-
Low RDS(on) at 4.5V VGS
-
Ultra-Low Gate Impedance
-
Fully Characterized Avalanche Voltage and Current
-
Gate-to-Source Voltage: ?à 20V
-
Operating Junction and Storage Temperature Range: -55 to+175??
IRF3711Z Applications
-
DC motor drive
-
High-efficiency synchronous rectification in SMPS
-
Uninterruptible power supply
-
High-speed power switching
-
Hard switched and high-frequency circuits
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