IRF3711STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3.1W Ta 120W Tc

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Input Capacitance :

2.98nF

Rds On (Max) @ Id, Vgs :

6mOhm @ 15A, 10V

Mount :

Surface Mount

Resistance :

6mOhm

Drain to Source Resistance :

8.5mOhm

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

2980pF @ 10V

Gate to Source Voltage (Vgs) :

20V

Current Rating :

110A

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

Rise Time :

220ns

Published :

2004

Continuous Drain Current (ID) :

110A

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

20V

Drain to Source Breakdown Voltage :

20V

Rds On Max :

6 mΩ

Supplier Device Package :

D2PAK

Number of Pins :

3

Power Dissipation :

120W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

RoHS Status :

RoHS Compliant

Voltage - Rated DC :

20V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 4.5V

Series :

HEXFET®