IRF3711SPBF
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- Mfr.Part #
- IRF3711SPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 110A D2PAK
- Stock
- 13,449
- In Stock ：
- 13,449
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Continuous Drain Current (ID) :
- 110A
- Voltage - Rated DC :
- 20V
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2980pF @ 10V
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 15A, 10V
- Width :
- 9.65mm
- Fall Time (Typ) :
- 12 ns
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Threshold Voltage :
- 3V
- REACH SVHC :
- No SVHC
- Vgs (Max) :
- ±20V
- Series :
- HEXFET®
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Rise Time :
- 220ns
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- RoHS Status :
- RoHS Compliant
- Resistance :
- 6mOhm
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Power Dissipation :
- 120W
- Packaging :
- Tube
- Turn On Delay Time :
- 12 ns
- Turn-Off Delay Time :
- 17 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 4.5V
- Published :
- 2004
- Current Rating :
- 110A
- Number of Elements :
- 1
- Height :
- 4.826mm
- Power Dissipation-Max :
- 3.1W Ta 120W Tc
- Length :
- 10.668mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Breakdown Voltage :
- 20V
- Mount :
- Surface Mount
- Datasheets
- IRF3711SPBF
N-Channel Tube 6m Ω @ 15A, 10V ±20V 2980pF @ 10V 44nC @ 4.5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF3711SPBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2980pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 110A amps.In this device, the drain-source breakdown voltage is 20V and VGS=20V, so the drain-source breakdown voltage is 20V in this case.It is [17 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 12 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 3V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
IRF3711SPBF Features
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 17 ns
a threshold voltage of 3V
IRF3711SPBF Applications
There are a lot of Infineon Technologies
IRF3711SPBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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