IRF3711S
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- Mfr.Part #
- IRF3711S
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 110A D2PAK
- Stock
- 1,506
- In Stock ：
- 1,506
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 2980pF @ 10V
- Power Dissipation-Max :
- 3.1W Ta 120W Tc
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 4.5V
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2004
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 15A, 10V
- Series :
- HEXFET®
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- RoHS Status :
- Non-RoHS Compliant
- Datasheets
- IRF3711S
N-Channel Tube 6m Ω @ 15A, 10V ±20V 2980pF @ 10V 44nC @ 4.5V 20V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF3711S Description
IRF3711S is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 20V. The operating temperature of the IRF3711S is -55°C~150°C TJ and its maximum power dissipation is 120W Tc. IRF3711S has 3 pins and it is available in Tube packaging way.
IRF3711S Features
-
Ultra-Low Gate Impedance
-
Very Low RDS(on) at 4.5V VGS
-
Fully Characterized Avalanche Voltage and Current
IRF3711S Applications
-
High Frequency Isolated DC-DC
-
Converters with Synchronous Rectification for Telecom and Industrial Use
-
High Frequency Buck Converters for Server Processor Power Synchronous FETOptimized for Synchronous Buck
-
Converters Including Capacitive Induced Turn-on Immunity
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