IRF3711PBF

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Mfr.Part #
IRF3711PBF
Manufacturer
Infineon Technologies
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 20V 110A TO220AB
Stock
6,829
In Stock :
6,829

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Lead Free :
Lead Free
Turn On Delay Time :
12 ns
Radiation Hardening :
No
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Published :
2004
Packaging :
Tube
Termination :
Through Hole
Transistor Element Material :
SILICON
Rds On (Max) @ Id, Vgs :
6m Ω @ 15A, 10V
Width :
4.69mm
JEDEC-95 Code :
TO-220AB
Avalanche Energy Rating (Eas) :
460 mJ
Nominal Vgs :
3 V
Length :
10.5156mm
RoHS Status :
RoHS Compliant
Vgs(th) (Max) @ Id :
3V @ 250µA
Operating Mode :
ENHANCEMENT MODE
Mounting Type :
Through Hole
Gate to Source Voltage (Vgs) :
20V
Case Connection :
DRAIN
Package / Case :
TO-220-3
Turn-Off Delay Time :
17 ns
FET Type :
N-Channel
REACH SVHC :
No SVHC
ECCN Code :
EAR99
Input Capacitance (Ciss) (Max) @ Vds :
2980pF @ 10V
Series :
HEXFET®
Drain to Source Breakdown Voltage :
20V
Resistance :
6mOhm
Dual Supply Voltage :
20V
Rise Time :
220ns
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
120W
Continuous Drain Current (ID) :
110A
Number of Elements :
1
Fall Time (Typ) :
12 ns
Pulsed Drain Current-Max (IDM) :
440A
Transistor Application :
SWITCHING
Number of Terminations :
3
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Number of Pins :
3
Current Rating :
110A
Threshold Voltage :
3V
Operating Temperature :
-55°C~150°C TJ
Mount :
Through Hole
Element Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
44nC @ 4.5V
Voltage - Rated DC :
20V
Height :
8.763mm
Power Dissipation-Max :
3.1W Ta 120W Tc
Datasheets
IRF3711PBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF3711PBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, IRF3711PBF pinout, IRF3711PBF datasheet PDF, IRF3711PBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF3711PBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF3711PBF


N-Channel Tube 6m Ω @ 15A, 10V ±20V 2980pF @ 10V 44nC @ 4.5V TO-220-3

IRF3711PBF Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 460 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2980pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 110A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 20V, and this device has a drainage-to-source breakdown voltage of 20VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 17 ns.Peak drain current is 440A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 3V, which means that it will not activate any of its functions when its threshold voltage reaches 3V.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

IRF3711PBF Features


the avalanche energy rating (Eas) is 460 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 17 ns
based on its rated peak drain current 440A.
a threshold voltage of 3V


IRF3711PBF Applications


There are a lot of Infineon Technologies
IRF3711PBF applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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