IRF3711LPBF
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- Mfr.Part #
- IRF3711LPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 110A TO262
- Stock
- 705
- In Stock ：
- 705
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Current Rating :
- 110A
- RoHS Status :
- RoHS Compliant
- Mount :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 4.5V
- Voltage - Rated DC :
- 20V
- Power Dissipation :
- 120W
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 2980pF @ 10V
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- HEXFET®
- Drain to Source Breakdown Voltage :
- 20V
- Turn On Delay Time :
- 12 ns
- Number of Pins :
- 3
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Lead Free :
- Lead Free
- Rise Time :
- 220ns
- Power Dissipation-Max :
- 3.1W Ta 120W Tc
- Continuous Drain Current (ID) :
- 110A
- Packaging :
- Tube
- Published :
- 2004
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 12 ns
- Turn-Off Delay Time :
- 17 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 15A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Datasheets
- IRF3711LPBF
N-Channel Tube 6m Ω @ 15A, 10V ±20V 2980pF @ 10V 44nC @ 4.5V TO-262-3 Long Leads, I2Pak, TO-262AA
IRF3711LPBF Overview
A device's maximum input capacitance is 2980pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 110A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=20V, and this device has a drain-to-source breakdown voltage of 20V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 17 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IRF3711LPBF Features
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 17 ns
IRF3711LPBF Applications
There are a lot of Infineon Technologies
IRF3711LPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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