IRF3711

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2980pF @ 10V

Rds On (Max) @ Id, Vgs :

6m Ω @ 15A, 10V

JESD-30 Code :

R-PSFM-T3

Mounting Type :

Through Hole

RoHS Status :

Non-RoHS Compliant

Drain to Source Voltage (Vdss) :

20V

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.006Ohm

Power Dissipation-Max :

3.1W Ta 120W Tc

Transistor Application :

SWITCHING

Published :

2004

Pulsed Drain Current-Max (IDM) :

440A

Avalanche Energy Rating (Eas) :

460 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Number of Terminations :

3

Series :

HEXFET®

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 4.5V

Surface Mount :

No

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain Current-Max (Abs) (ID) :

110A

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Number of Elements :

1

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

20V

Package / Case :

TO-220-3

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED