IRF3710ZSTRRPBF
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- Mfr.Part #
- IRF3710ZSTRRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 59A D2PAK
- Stock
- 2,916
- In Stock ：
- 2,916
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Operating Temperature :
- 175°C
- Rise Time :
- 77ns
- Width :
- 9.65mm
- Rds On (Max) @ Id, Vgs :
- 18mOhm @ 35A, 10V
- Rds On Max :
- 18 mΩ
- Power Dissipation :
- 160W
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 10V
- Continuous Drain Current (ID) :
- 59A
- Mounting Type :
- Surface Mount
- Length :
- 10.668mm
- Drain to Source Breakdown Voltage :
- 100V
- Number of Pins :
- 3
- Input Capacitance :
- 2.9nF
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Resistance :
- 18mOhm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 2900pF @ 25V
- RoHS Status :
- RoHS Compliant
- Drain to Source Voltage (Vdss) :
- 100V
- Height :
- 4.826mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 59A Tc
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 56 ns
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 41 ns
- Series :
- HEXFET®
- Power Dissipation-Max :
- 160W Tc
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 17 ns
- Min Operating Temperature :
- -55°C
- Published :
- 2010
- Supplier Device Package :
- D2PAK
- Datasheets
- IRF3710ZSTRRPBF
N-Channel Tape & Reel (TR) 18mOhm @ 35A, 10V ±20V 2900pF @ 25V 120nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF3710ZSTRRPBF Overview
A device's maximum input capacitance is 2900pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 59A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 41 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 18mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 17 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRF3710ZSTRRPBF Features
a continuous drain current (ID) of 59A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 41 ns
single MOSFETs transistor is 18mOhm
a 100V drain to source voltage (Vdss)
IRF3710ZSTRRPBF Applications
There are a lot of Infineon Technologies
IRF3710ZSTRRPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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