IRF3710ZSTRLPBF
- Mfr.Part #
- IRF3710ZSTRLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 59A D2PAK
- Stock
- 2,184
- In Stock :
- 2,184
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~175°C TJ
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 10V
- Nominal Vgs :
- 4 V
- Turn On Delay Time :
- 17 ns
- Pulsed Drain Current-Max (IDM) :
- 240A
- Termination :
- SMD/SMT
- Recovery Time :
- 75 ns
- JESD-609 Code :
- e3
- Current Rating :
- 59A
- Height :
- 5.084mm
- Resistance :
- 18mOhm
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 18m Ω @ 35A, 10V
- Length :
- 10.668mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 2900pF @ 25V
- Power Dissipation-Max :
- 160W Tc
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 56 ns
- Current - Continuous Drain (Id) @ 25°C :
- 59A Tc
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Factory Lead Time :
- 12 Weeks
- Number of Channels :
- 1
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Threshold Voltage :
- 4V
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminations :
- 2
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 100V
- Number of Pins :
- 3
- Rise Time :
- 77ns
- Max Junction Temperature (Tj) :
- 175°C
- Voltage - Rated DC :
- 100V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Reverse Recovery Time :
- 50 ns
- Dual Supply Voltage :
- 100V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Width :
- 9.65mm
- Published :
- 2003
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Series :
- HEXFET®
- Continuous Drain Current (ID) :
- 59A
- Power Dissipation :
- 160W
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 41 ns
- Vgs (Max) :
- ±20V
- REACH SVHC :
- No SVHC
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- IRF3710ZSTRLPBF

N-Channel Tape & Reel (TR) 18m Ω @ 35A, 10V ±20V 2900pF @ 25V 120nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF3710ZSTRLPBF Description
IRF3710ZSTRLPBF is a kind of HEXFET? power MOSFET that is designed based on advanced process technology for the purpose of making extremely low on-resistance per silicon area possible. Moreover, IRF3710ZSTRLPBF is capable of providing a fast switching speed, improved repetitive avalanche rating, and a 175°C junction operating temperature. All of these make the device more efficient and reliable for use in a wide range of applications.
IRF3710ZSTRLPBF Features
-
Ultra-low on-resistance
-
Advanced processing techniques
-
Fast switching speed
-
Ruggedized device design
-
Available in the D2Pak package
IRF3710ZSTRLPBF Applications
-
Synchronous rectification
-
Uninterruptible power supply
-
High-speed switching
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