IRF3710ZSTRLPBF

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Mfr.Part #
IRF3710ZSTRLPBF
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 100V 59A D2PAK
Stock
2,184
In Stock :
2,184

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~175°C TJ
FET Type :
N-Channel
Lead Free :
Lead Free
Gate Charge (Qg) (Max) @ Vgs :
120nC @ 10V
Nominal Vgs :
4 V
Turn On Delay Time :
17 ns
Pulsed Drain Current-Max (IDM) :
240A
Termination :
SMD/SMT
Recovery Time :
75 ns
JESD-609 Code :
e3
Current Rating :
59A
Height :
5.084mm
Resistance :
18mOhm
Packaging :
Tape and Reel (TR)
Case Connection :
DRAIN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
18m Ω @ 35A, 10V
Length :
10.668mm
Input Capacitance (Ciss) (Max) @ Vds :
2900pF @ 25V
Power Dissipation-Max :
160W Tc
Peak Reflow Temperature (Cel) :
260
Transistor Element Material :
SILICON
Number of Elements :
1
Avalanche Energy Rating (Eas) :
200 mJ
Transistor Application :
SWITCHING
Fall Time (Typ) :
56 ns
Current - Continuous Drain (Id) @ 25°C :
59A Tc
ECCN Code :
EAR99
Time@Peak Reflow Temperature-Max (s) :
30
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Factory Lead Time :
12 Weeks
Number of Channels :
1
Vgs(th) (Max) @ Id :
4V @ 250µA
Threshold Voltage :
4V
JESD-30 Code :
R-PSSO-G2
Number of Terminations :
2
Gate to Source Voltage (Vgs) :
20V
RoHS Status :
ROHS3 Compliant
Mount :
Surface Mount
Drain to Source Breakdown Voltage :
100V
Number of Pins :
3
Rise Time :
77ns
Max Junction Temperature (Tj) :
175°C
Voltage - Rated DC :
100V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Reverse Recovery Time :
50 ns
Dual Supply Voltage :
100V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Width :
9.65mm
Published :
2003
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Mounting Type :
Surface Mount
Radiation Hardening :
No
Terminal Form :
Gull wing
Series :
HEXFET®
Continuous Drain Current (ID) :
59A
Power Dissipation :
160W
Element Configuration :
Single
Turn-Off Delay Time :
41 ns
Vgs (Max) :
±20V
REACH SVHC :
No SVHC
Operating Mode :
ENHANCEMENT MODE
Datasheets
IRF3710ZSTRLPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF3710ZSTRLPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Channels:1, Number of Terminations:2, Number of Pins:3, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, IRF3710ZSTRLPBF pinout, IRF3710ZSTRLPBF datasheet PDF, IRF3710ZSTRLPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF3710ZSTRLPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF3710ZSTRLPBF


N-Channel Tape & Reel (TR) 18m Ω @ 35A, 10V ±20V 2900pF @ 25V 120nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF3710ZSTRLPBF Description


IRF3710ZSTRLPBF is a kind of HEXFET? power MOSFET that is designed based on advanced process technology for the purpose of making extremely low on-resistance per silicon area possible. Moreover, IRF3710ZSTRLPBF is capable of providing a fast switching speed, improved repetitive avalanche rating, and a 175°C junction operating temperature. All of these make the device more efficient and reliable for use in a wide range of applications. 



IRF3710ZSTRLPBF Features


  • Ultra-low on-resistance

  • Advanced processing techniques

  • Fast switching speed  

  • Ruggedized device design

  • Available in the D2Pak package



IRF3710ZSTRLPBF Applications


  • Synchronous rectification

  • Uninterruptible power supply

  • High-speed switching


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