IRF3710ZSPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

FET Type :

N-Channel

Packaging :

Tube

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Voltage (Vdss) :

100V

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

59A

Current - Continuous Drain (Id) @ 25°C :

59A Tc

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

18m Ω @ 35A, 10V

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

DS Breakdown Voltage-Min :

100V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 25V

Case Connection :

DRAIN

Published :

2003

Transistor Element Material :

SILICON

Terminal Position :

Single

Drain-source On Resistance-Max :

0.018Ohm

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Power Dissipation-Max :

160W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

200 mJ

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Pulsed Drain Current-Max (IDM) :

240A

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSSO-G2