IRF3710ZPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Terminal Finish :

MATTE TIN OVER NICKEL

Max Junction Temperature (Tj) :

175°C

Continuous Drain Current (ID) :

59A

Fall Time (Typ) :

56 ns

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

Published :

2003

Package / Case :

TO-220-3

Dual Supply Voltage :

100V

Number of Elements :

1

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Termination :

Through Hole

Nominal Vgs :

4 V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Transistor Application :

SWITCHING

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 25V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

59A Tc

Peak Reflow Temperature (Cel) :

250

Mount :

Through Hole

Turn On Delay Time :

17 ns

Reverse Recovery Time :

50 ns

Lead Pitch :

2.54mm

Rise Time :

77ns

Pulsed Drain Current-Max (IDM) :

240A

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

30

Threshold Voltage :

4V

Mounting Type :

Through Hole

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.54mm

Recovery Time :

75 ns

Height :

19.8mm

Operating Temperature :

-55°C~175°C TJ

Resistance :

18mOhm

Number of Channels :

1

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

18m Ω @ 35A, 10V

Turn-Off Delay Time :

41 ns

Current Rating :

59A

Width :

4.69mm

Factory Lead Time :

12 Weeks

Drain to Source Breakdown Voltage :

100V

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Voltage - Rated DC :

100V

Power Dissipation :

160W

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Vgs (Max) :

±20V

JESD-609 Code :

e3

Power Dissipation-Max :

160W Tc

Packaging :

Tube

Avalanche Energy Rating (Eas) :

200 mJ