IRF3710ZLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

100V

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Lead Free

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

18m Ω @ 35A, 10V

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

240A

Transistor Element Material :

SILICON

Packaging :

Tube

Turn-Off Delay Time :

41 ns

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Height :

9.65mm

Mounting Type :

Through Hole

Turn On Delay Time :

17 ns

Published :

2003

Operating Temperature :

-55°C~175°C TJ

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Rise Time :

77ns

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Continuous Drain Current (ID) :

59A

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

160W Tc

Avalanche Energy Rating (Eas) :

200 mJ

Nominal Vgs :

4 V

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

59A Tc

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

100V

Factory Lead Time :

15 Weeks

Fall Time (Typ) :

56 ns

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Current Rating :

59A

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 25V

Radiation Hardening :

No

Length :

10.668mm

Power Dissipation :

160W

Width :

4.826mm

FET Type :

N-Channel