IRF3710STRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

23m Ω @ 28A, 10V

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

180A

Reach Compliance Code :

not_compliant

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

280 mJ

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

100V

Drain to Source Voltage (Vdss) :

100V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

FET Type :

N-Channel

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.023Ohm

Drain Current-Max (Abs) (ID) :

57A

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Terminations :

2

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Qualification Status :

Not Qualified

Terminal Position :

Single

ECCN Code :

EAR99

Series :

HEXFET®

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Power Dissipation-Max :

200W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2009

Factory Lead Time :

14 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

3130pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

57A Tc

Surface Mount :

yes