IRF3710STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

45 ns

Published :

2009

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

10.668mm

Rise Time :

58ns

Transistor Application :

SWITCHING

Recovery Time :

220 ns

Power Dissipation-Max :

200W Tc

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

Number of Terminations :

2

Element Configuration :

Single

Fall Time (Typ) :

47 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

23m Ω @ 28A, 10V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Resistance :

23mOhm

Current - Continuous Drain (Id) @ 25°C :

57A Tc

Termination :

SMD/SMT

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

12 ns

Avalanche Energy Rating (Eas) :

280 mJ

Mount :

Surface Mount

Power Dissipation :

200W

Height :

4.826mm

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Threshold Voltage :

4V

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Current Rating :

57A

Number of Elements :

1

Nominal Vgs :

4 V

Peak Reflow Temperature (Cel) :

260

Series :

HEXFET®

Width :

9.65mm

Radiation Hardening :

No

Case Connection :

DRAIN

Dual Supply Voltage :

100V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Voltage - Rated DC :

100V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

57A

Number of Pins :

3

Factory Lead Time :

12 Weeks

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Contains Lead, Lead Free

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

3130pF @ 25V

Drain to Source Breakdown Voltage :

100V