IRF3710SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

57A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

280 mJ

Drain-source On Resistance-Max :

0.023Ohm

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

100V

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

30

Reach Compliance Code :

not_compliant

Terminal Position :

Single

Factory Lead Time :

52 Weeks

Series :

HEXFET®

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Published :

2005

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tube

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

3130pF @ 25V

Qualification Status :

Not Qualified

Power Dissipation-Max :

200W Tc

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

180A

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

23m Ω @ 28A, 10V

Drain Current-Max (Abs) (ID) :

57A

Case Connection :

DRAIN

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE